Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO(2)/Ti/CeO(2) Resistive Switching Devices by Changing Top Electrode Material

Resistance switching characteristics of CeO(2)/Ti/CeO(2) tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO(2)/Ti/CeO(2)/Pt reveal better resistive switchin...

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Enregistré dans:
Détails bibliographiques
Publié dans:Sci Rep
Auteurs principaux: Rana, Anwar Manzoor, Akbar, Tahira, Ismail, Muhammad, Ahmad, Ejaz, Hussain, Fayyaz, Talib, Ijaz, Imran, Muhammad, Mehmood, Khalid, Iqbal, Khalid, Nadeem, M. Younus
Format: Artigo
Langue:Inglês
Publié: Nature Publishing Group 2017
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Article
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC5227716/
https://ncbi.nlm.nih.gov/pubmed/28079056
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep39539
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