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Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching
Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM). In this article, we provide a new insight into the app...
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| Publicado no: | PLoS One |
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| Main Authors: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Public Library of Science
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5167399/ https://ncbi.nlm.nih.gov/pubmed/27992513 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1371/journal.pone.0168515 |
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