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Passivation and characterization of charge defects in ambipolar silicon quantum dots
In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both before and after an annealing process which uses an A...
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| 出版年: | Sci Rep |
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| 主要な著者: | , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group
2016
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5138628/ https://ncbi.nlm.nih.gov/pubmed/27922048 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep38127 |
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