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Passivation and characterization of charge defects in ambipolar silicon quantum dots
In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both before and after an annealing process which uses an A...
Tallennettuna:
| Julkaisussa: | Sci Rep |
|---|---|
| Päätekijät: | , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Nature Publishing Group
2016
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5138628/ https://ncbi.nlm.nih.gov/pubmed/27922048 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep38127 |
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