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The Luminescent Inhomogeneity and the Distribution of Zinc Vacancy-Related Acceptor-Like Defects in N-Doped ZnO Microrods
Vertically aligned N-doped ZnO microrods with a hexagonal symmetry were fabricated via the chemical vapor transport with abundant N(2)O as both O and N precursors. We have demonstrated the suppression of the zinc interstitial-related shallow donor defects and have identified the zinc vacancy-related...
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| Vydáno v: | Nanoscale Res Lett |
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| Hlavní autoři: | , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer US
2016
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5120051/ https://ncbi.nlm.nih.gov/pubmed/27878574 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1736-7 |
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