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Trap-mediated electronic transport properties of gate-tunable pentacene/MoS(2) p-n heterojunction diodes
We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS(2)) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the hete...
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| Publié dans: | Sci Rep |
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| Auteurs principaux: | , , , , , , , , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Nature Publishing Group
2016
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5103186/ https://ncbi.nlm.nih.gov/pubmed/27829663 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep36775 |
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