Ultrafast, Broadband Photodetector Based on MoSe(2)/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode

A MoSe(2)/Si heterojunction photodetector is constructed by depositing MoSe(2) film with vertically standing layered structure on Si substrate. Graphene transparent electrode is utilized to further enhance the separation and transport of photogenerated carriers. The device shows excellent performanc...

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Dettagli Bibliografici
Pubblicato in:Adv Sci (Weinh)
Autori principali: Mao, Jie, Yu, Yongqiang, Wang, Liu, Zhang, Xiujuan, Wang, Yuming, Shao, Zhibin, Jie, Jiansheng
Natura: Artigo
Lingua:Inglês
Pubblicazione: John Wiley and Sons Inc. 2016
Soggetti:
Communications
Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC5102659/
https://ncbi.nlm.nih.gov/pubmed/27980984
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201600018
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