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Ultrafast, Broadband Photodetector Based on MoSe(2)/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode

A MoSe(2)/Si heterojunction photodetector is constructed by depositing MoSe(2) film with vertically standing layered structure on Si substrate. Graphene transparent electrode is utilized to further enhance the separation and transport of photogenerated carriers. The device shows excellent performanc...

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Bibliographische Detailangaben
Veröffentlicht in:Adv Sci (Weinh)
Hauptverfasser: Mao, Jie, Yu, Yongqiang, Wang, Liu, Zhang, Xiujuan, Wang, Yuming, Shao, Zhibin, Jie, Jiansheng
Format: Artigo
Sprache:Inglês
Veröffentlicht: John Wiley and Sons Inc. 2016
Schlagworte:
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC5102659/
https://ncbi.nlm.nih.gov/pubmed/27980984
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201600018
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