Nalaganje...
Superconductivity in carrier-doped silicon carbide
We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a critical temperature T(c)=1.5 K. On the other hand, Al-doped 3C-SiC (3C-SiC:Al) shows type-II superconductivity with T(c)=1.4 K. Both...
Shranjeno v:
| izdano v: | Sci Technol Adv Mater |
|---|---|
| Main Authors: | , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Taylor & Francis
2009
|
| Teme: | |
| Online dostop: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5099635/ https://ncbi.nlm.nih.gov/pubmed/27878021 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1088/1468-6996/9/4/044204 |
| Oznake: |
Označite
Brez oznak, prvi označite!
|