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Superconductivity in carrier-doped silicon carbide
We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a critical temperature T(c)=1.5 K. On the other hand, Al-doped 3C-SiC (3C-SiC:Al) shows type-II superconductivity with T(c)=1.4 K. Both...
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| Publicat a: | Sci Technol Adv Mater |
|---|---|
| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Taylor & Francis
2009
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5099635/ https://ncbi.nlm.nih.gov/pubmed/27878021 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1088/1468-6996/9/4/044204 |
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