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Deep-submicron Graphene Field-Effect Transistors with State-of-Art f(max)
In order to conquer the short-channel effects that limit conventional ultra-scale semiconductor devices, two-dimensional materials, as an option of ultimate thin channels, receive wide attention. Graphene, in particular, bears great expectations because of its supreme carrier mobility and saturation...
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| Pubblicato in: | Sci Rep |
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| Autori principali: | , , , , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group
2016
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5075922/ https://ncbi.nlm.nih.gov/pubmed/27775009 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep35717 |
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