A carregar...
Solution‐Processed Vertically Stacked Complementary Organic Circuits with Inkjet‐Printed Routing
The fabrication and measurements of solution‐processed vertically stacked complementary organic field‐effect transistors (FETs) with a high static noise margin (SNM) are reported. In the device structure, a bottom‐gate p‐type organic FET (PFET) is vertically integrated on a top‐gate n‐type organic F...
Na minha lista:
| Publicado no: | Adv Sci (Weinh) |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
John Wiley and Sons Inc.
2016
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5067658/ https://ncbi.nlm.nih.gov/pubmed/27812468 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201500439 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|