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Solution‐Processed Vertically Stacked Complementary Organic Circuits with Inkjet‐Printed Routing
The fabrication and measurements of solution‐processed vertically stacked complementary organic field‐effect transistors (FETs) with a high static noise margin (SNM) are reported. In the device structure, a bottom‐gate p‐type organic FET (PFET) is vertically integrated on a top‐gate n‐type organic F...
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| Vydáno v: | Adv Sci (Weinh) |
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| Hlavní autoři: | , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
John Wiley and Sons Inc.
2016
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5067658/ https://ncbi.nlm.nih.gov/pubmed/27812468 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/advs.201500439 |
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