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Towards Understanding Early Failures Behavior during Device Burn-In: Broadband RF Monitoring of Atomistic Changes in Materials
In this paper, we attempt to understand the physico-chemical changes that occur in devices during device “burn-in”. We discuss the use of low frequency dielectric spectroscopy to detect, characterize and monitor changes in electrical defects present in the dielectrics of through silicon vias (TSV) f...
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| Publicado no: | ECS J Solid State Sci Technol |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5058429/ https://ncbi.nlm.nih.gov/pubmed/27738561 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1149/2.0411609jss |
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