Lanean...
Controlling the defects and transition layer in SiO(2) films grown on 4H-SiC via direct plasma-assisted oxidation
The structural stability and electrical performance of SiO(2) grown on SiC via direct plasma-assisted oxidation were investigated. To investigate the changes in the electronic structure and electrical characteristics caused by the interfacial reaction between the SiO(2) film (thickness ~5 nm) and Si...
Gorde:
| Argitaratua izan da: | Sci Rep |
|---|---|
| Egile Nagusiak: | , , , , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
Nature Publishing Group
2016
|
| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5056351/ https://ncbi.nlm.nih.gov/pubmed/27721493 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep34945 |
| Etiketak: |
Etiketa erantsi
Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!
|