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Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform
It is shown that compressively strained Ge(1−x)Sn(x)/Ge quantum wells (QWs) grown on a Ge substrate with 0.1 ≤ x ≤ 0.2 and width of 8 nm ≤ d ≤ 14 nm are a very promising gain medium for lasers integrated with an Si platform. Such QWs are type-I QWs with a direct bandgap and positive transverse elect...
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| Publicado no: | Sci Rep |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5043186/ https://ncbi.nlm.nih.gov/pubmed/27686056 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep34082 |
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