Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes

The continuing revolutionary success of mobile computing and smart devices calls for the development of novel, cost- and energy-efficient memories. Resistive switching is attractive because of, inter alia, increased switching speed and device density. On electrical stimulus, complex nanoscale redox...

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Publicado no:Nat Commun
Main Authors: Baeumer, Christoph, Schmitz, Christoph, Marchewka, Astrid, Mueller, David N., Valenta, Richard, Hackl, Johanna, Raab, Nicolas, Rogers, Steven P., Khan, M. Imtiaz, Nemsak, Slavomir, Shim, Moonsub, Menzel, Stephan, Schneider, Claus Michael, Waser, Rainer, Dittmann, Regina
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2016
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4992164/
https://ncbi.nlm.nih.gov/pubmed/27539213
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms12398
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