Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes

The continuing revolutionary success of mobile computing and smart devices calls for the development of novel, cost- and energy-efficient memories. Resistive switching is attractive because of, inter alia, increased switching speed and device density. On electrical stimulus, complex nanoscale redox...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nat Commun
Hauptverfasser: Baeumer, Christoph, Schmitz, Christoph, Marchewka, Astrid, Mueller, David N., Valenta, Richard, Hackl, Johanna, Raab, Nicolas, Rogers, Steven P., Khan, M. Imtiaz, Nemsak, Slavomir, Shim, Moonsub, Menzel, Stephan, Schneider, Claus Michael, Waser, Rainer, Dittmann, Regina
Format: Artigo
Sprache:Inglês
Veröffentlicht: Nature Publishing Group 2016
Schlagworte:
Article
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4992164/
https://ncbi.nlm.nih.gov/pubmed/27539213
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms12398
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!

Ähnliche Einträge