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Nonvolatile and tunable switching of lateral photo-voltage triggered by laser and electric pulse in metal dusted metal-oxide-semiconductor structures
Owing to the innate stabilization of built-in potential in p–n junction or metal-oxide-semiconductor structure, the sensitivity and linearity of most lateral photovoltaic effect (LPE) devices is always fixed after fabrication. Here we report a nonvolatile and tunable switching effect of lateral phot...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4989190/ https://ncbi.nlm.nih.gov/pubmed/27535351 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep32015 |
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