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Dislocation network with pair-coupling structure in {111} γ/γ′ interface of Ni-based single crystal superalloy

The γ/γ′ interface dislocation network is reported to improve the high temperature creep resistance of single crystal superalloys and is usually found to deposit in {001} interface. In this work, a new type of dislocation network was found in {111} γ/γ′ interface at a single crystal model superalloy...

पूर्ण विवरण

में बचाया:
ग्रंथसूची विवरण
में प्रकाशित:Sci Rep
मुख्य लेखकों: Ru, Yi, Li, Shusuo, Zhou, Jian, Pei, Yanling, Wang, Hui, Gong, Shengkai, Xu, Huibin
स्वरूप: Artigo
भाषा:Inglês
प्रकाशित: Nature Publishing Group 2016
विषय:
ऑनलाइन पहुंच:https://ncbi.nlm.nih.gov/pmc/articles/PMC4980694/
https://ncbi.nlm.nih.gov/pubmed/27511822
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep29941
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