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Dislocation network with pair-coupling structure in {111} γ/γ′ interface of Ni-based single crystal superalloy
The γ/γ′ interface dislocation network is reported to improve the high temperature creep resistance of single crystal superalloys and is usually found to deposit in {001} interface. In this work, a new type of dislocation network was found in {111} γ/γ′ interface at a single crystal model superalloy...
שמור ב:
| הוצא לאור ב: | Sci Rep |
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| Main Authors: | , , , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Nature Publishing Group
2016
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4980694/ https://ncbi.nlm.nih.gov/pubmed/27511822 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep29941 |
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