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Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO(2) Multilayers
High-conductive phosphorus-doped Si nanocrystals/SiO(2)(nc-Si/SiO(2)) multilayers are obtained, and the formation of Si nanocrystals with the average crystal size of 6 nm is confirmed by high-resolution transmission electron microscopy and Raman spectra. The temperature-dependent carrier transport b...
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| Pubblicato in: | Nanoscale Res Lett |
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| Autori principali: | , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer US
2016
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4961652/ https://ncbi.nlm.nih.gov/pubmed/27460594 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1561-z |
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