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Nanoscale electrical properties of epitaxial Cu(3)Ge film

Cu(3)Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Improvements in electrical performance and structure of Cu(3)Ge have attracted great attention in the past decades. Despite the remarka...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Wu, Fan, Cai, Wei, Gao, Jia, Loo, Yueh-Lin, Yao, Nan
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2016
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4929471/
https://ncbi.nlm.nih.gov/pubmed/27363582
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep28818
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