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Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent gate control resulting from their atomically thin dimensions. However, most TMDs have bandgaps (E(g)) and effective...
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| Izdano u: | Sci Rep |
|---|---|
| Glavni autori: | , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Nature Publishing Group
2016
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4921921/ https://ncbi.nlm.nih.gov/pubmed/27345020 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep28515 |
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