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Evidence That Voltage Rather Than Resistance is Quantized in Breakdown of the Quantum Hall Effect
Quantized longitudinal voltage drops are observed along a length of a GaAs/AlGaAs heterostructure quantum Hall effect device at applied currents large enough for the device to be in the breakdown regime. The range of currents is extensive enough to demonstrate that it is the longitudinal voltage tha...
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| Publicado no: | J Res Natl Inst Stand Technol |
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| Autor principal: | |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
[Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology
1996
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4907585/ https://ncbi.nlm.nih.gov/pubmed/27805124 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.6028/jres.101.019 |
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