טוען...
Evidence That Voltage Rather Than Resistance is Quantized in Breakdown of the Quantum Hall Effect
Quantized longitudinal voltage drops are observed along a length of a GaAs/AlGaAs heterostructure quantum Hall effect device at applied currents large enough for the device to be in the breakdown regime. The range of currents is extensive enough to demonstrate that it is the longitudinal voltage tha...
שמור ב:
| הוצא לאור ב: | J Res Natl Inst Stand Technol |
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| מחבר ראשי: | |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
[Gaithersburg, MD] : U.S. Dept. of Commerce, National Institute of Standards and Technology
1996
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4907585/ https://ncbi.nlm.nih.gov/pubmed/27805124 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.6028/jres.101.019 |
| תגים: |
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