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Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As
Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate new functionalities of spintronic devices. Here, we report on low-temperature angle-resolved photoemission studies of the...
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Publicado no: | Sci Rep |
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Main Authors: | , , , , , , , |
Formato: | Artigo |
Idioma: | Inglês |
Publicado em: |
Nature Publishing Group
2016
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Assuntos: | |
Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4893692/ https://ncbi.nlm.nih.gov/pubmed/27265402 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep27266 |
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