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Positioning of the Fermi Level in Graphene Devices with Asymmetric Metal Electrodes
To elucidate the effect of the work function on the position of the Dirac point, we fabricated graphene devices with asymmetric metal contacts. By measuring the peak position of the resistance for each pair of metal electrodes, we obtained the voltage of the Dirac point VgDirac (V) from the gate res...
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| Main Authors: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Hindawi Limited
2010-01-01
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| Colecção: | Journal of Nanomaterials |
| Acesso em linha: | http://dx.doi.org/10.1155/2010/575472 |
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