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Pulsed laser deposited GeTe-rich GeTe-Sb(2)Te(3) thin films

Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb(2)Te(3) (Ge(6)Sb(2)Te(9), Ge(8)Sb(2)Te(11), Ge(10)Sb(2)Te(13), and Ge(12)Sb(2)Te(15)) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST...

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Dades bibliogràfiques
Publicat a:Sci Rep
Autors principals: Bouška, M., Pechev, S., Simon, Q., Boidin, R., Nazabal, V., Gutwirth, J., Baudet, E., Němec, P.
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group 2016
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4873812/
https://ncbi.nlm.nih.gov/pubmed/27199107
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep26552
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