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Fast electronic resistance switching involving hidden charge density wave states
The functionality of computer memory elements is currently based on multi-stability, driven either by locally manipulating the density of electrons in transistors or by switching magnetic or ferroelectric order. Another possibility is switching between metallic and insulating phases by the motion of...
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| Publicado no: | Nat Commun |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4873615/ https://ncbi.nlm.nih.gov/pubmed/27181483 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms11442 |
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