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Fast electronic resistance switching involving hidden charge density wave states

The functionality of computer memory elements is currently based on multi-stability, driven either by locally manipulating the density of electrons in transistors or by switching magnetic or ferroelectric order. Another possibility is switching between metallic and insulating phases by the motion of...

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Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
Cyhoeddwyd yn:Nat Commun
Prif Awduron: Vaskivskyi, I., Mihailovic, I. A., Brazovskii, S., Gospodaric, J., Mertelj, T., Svetin, D., Sutar, P., Mihailovic, D.
Fformat: Artigo
Iaith:Inglês
Cyhoeddwyd: Nature Publishing Group 2016
Pynciau:
Mynediad Ar-lein:https://ncbi.nlm.nih.gov/pmc/articles/PMC4873615/
https://ncbi.nlm.nih.gov/pubmed/27181483
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms11442
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