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Anomalous enhancement of the sheet carrier density beyond the classic limit on a SrTiO(3) surface
Electrostatic carrier accumulation on an insulating (100) surface of SrTiO(3) by fabricating a field effect transistor with Parylene-C (6 nm)/HfO(2) (20 nm) bilayer gate insulator has revealed a mystifying phenomenon: sheet carrier density [Image: see text] is about 10 times as large as [Image: see...
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| Pubblicato in: | Sci Rep |
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| Autori principali: | , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group
2016
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4865841/ https://ncbi.nlm.nih.gov/pubmed/27174141 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep25789 |
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