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Anomalous enhancement of the sheet carrier density beyond the classic limit on a SrTiO(3) surface

Electrostatic carrier accumulation on an insulating (100) surface of SrTiO(3) by fabricating a field effect transistor with Parylene-C (6 nm)/HfO(2) (20 nm) bilayer gate insulator has revealed a mystifying phenomenon: sheet carrier density [Image: see text] is about 10 times as large as [Image: see...

Täydet tiedot

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Bibliografiset tiedot
Julkaisussa:Sci Rep
Päätekijät: Kumar, Neeraj, Kitoh, Ai, Inoue, Isao H.
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Nature Publishing Group 2016
Aiheet:
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC4865841/
https://ncbi.nlm.nih.gov/pubmed/27174141
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep25789
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