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Formation and Temperature Effect of InN Nanodots by PA-MBE via Droplet Epitaxy Technique
In this report, self-organized indium nitride nanodots have been grown on Si (111) by droplet epitaxy method and their density can reach as high as 2.83 × 10(11) cm(−2) for the growth at low temperature of 250 °C. Based on the in situ reflection high-energy electron diffraction, the surface conditio...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4854854/ https://ncbi.nlm.nih.gov/pubmed/27142879 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1455-0 |
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