Illumination Effect on Bipolar Switching Properties of Gd:SiO(2) RRAM Devices Using Transparent Indium Tin Oxide Electrode

To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO(2) thin films under the ultraviolet (λ = 400 nm) and red-light (λ = 770 nm)...

Description complète

Enregistré dans:
Détails bibliographiques
Publié dans:Nanoscale Res Lett
Auteurs principaux: Chen, Kai-Huang, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Liang, Shu-Ping, Young, Tai-Fa, Syu, Yong-En, Sze, Simon M.
Format: Artigo
Langue:Inglês
Publié: Springer US 2016
Sujets:
Nano Express
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC4846604/
https://ncbi.nlm.nih.gov/pubmed/27117634
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1431-8
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!

Documents similaires