Загрузка...
Realization of Minimum and Maximum Gate Function in Ta(2)O(5)-based Memristive Devices
Redox-based resistive switching devices (ReRAM) are considered key enablers for future non-volatile memory and logic applications. Functionally enhanced ReRAM devices could enable new hardware concepts, e.g. logic-in-memory or neuromorphic applications. In this work, we demonstrate the implementatio...
Сохранить в:
| Опубликовано в: : | Sci Rep |
|---|---|
| Главные авторы: | , , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Nature Publishing Group
2016
|
| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4820708/ https://ncbi.nlm.nih.gov/pubmed/27046279 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep23967 |
| Метки: |
Добавить метку
Нет меток, Требуется 1-ая метка записи!
|