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Realization of Minimum and Maximum Gate Function in Ta(2)O(5)-based Memristive Devices
Redox-based resistive switching devices (ReRAM) are considered key enablers for future non-volatile memory and logic applications. Functionally enhanced ReRAM devices could enable new hardware concepts, e.g. logic-in-memory or neuromorphic applications. In this work, we demonstrate the implementatio...
Shranjeno v:
| izdano v: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Nature Publishing Group
2016
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| Teme: | |
| Online dostop: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4820708/ https://ncbi.nlm.nih.gov/pubmed/27046279 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep23967 |
| Oznake: |
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