Načítá se...
Realization of Minimum and Maximum Gate Function in Ta(2)O(5)-based Memristive Devices
Redox-based resistive switching devices (ReRAM) are considered key enablers for future non-volatile memory and logic applications. Functionally enhanced ReRAM devices could enable new hardware concepts, e.g. logic-in-memory or neuromorphic applications. In this work, we demonstrate the implementatio...
Uloženo v:
| Vydáno v: | Sci Rep |
|---|---|
| Hlavní autoři: | , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2016
|
| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4820708/ https://ncbi.nlm.nih.gov/pubmed/27046279 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep23967 |
| Tagy: |
Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!
|