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Atomic-Scale Engineering of Abrupt Interface for Direct Spin Contact of Ferromagnetic Semiconductor with Silicon

Control and manipulation of the spin of conduction electrons in industrial semiconductors such as silicon are suggested as an operating principle for a new generation of spintronic devices. Coherent injection of spin-polarized carriers into Si is a key to this novel technology. It is contingent on o...

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Publicado no:Sci Rep
Main Authors: Averyanov, Dmitry V., Karateeva, Christina G., Karateev, Igor A., Tokmachev, Andrey M., Vasiliev, Alexander L., Zolotarev, Sergey I., Likhachev, Igor A., Storchak, Vyacheslav G.
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2016
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Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4783778/
https://ncbi.nlm.nih.gov/pubmed/26957146
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep22841
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