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Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance
A distinguishing feature of spin accumulation in ferromagnet–semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason,...
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| Publicado no: | Nat Commun |
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| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4735623/ https://ncbi.nlm.nih.gov/pubmed/26777243 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms10296 |
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