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Few-layer HfS(2) transistors
HfS(2) is the novel transition metal dichalcogenide, which has not been experimentally investigated as the material for electron devices. As per the theoretical calculations, HfS(2) has the potential for well-balanced mobility (1,800 cm(2)/V·s) and bandgap (1.2 eV) and hence it can be a good candida...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4772098/ https://ncbi.nlm.nih.gov/pubmed/26926098 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep22277 |
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