Different Nucleation Mechanisms during Atomic Layer Deposition of HfS2 on Cobalt Oxide Surfaces

Abstract The atomic layer deposition (ALD) of HfS2 is investigated on atomically defined CoO(100) and CoO(111) surfaces under ultrahigh‐vacuum (UHV) conditions. The ALD process is performed by sequential dosing of the precursors tetrakis(dimethylamido)hafnium (TDMAH) and deuterium sulfide (D2S) sepa...

Descripció completa

Dades bibliogràfiques

Autors principals:	Georg Fickenscher, Nikolai Sidorenko, Kira Mikulinskaya, Jörg Libuda
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley-VCH 2025-01-01
Col·lecció:	Advanced Materials Interfaces
Matèries:	atomic layer deposition cobalt oxide HfS2 infrared reflection absorption spectroscopy Lewis acid–base reaction
Accés en línia:	https://doi.org/10.1002/admi.202400371
Etiquetes:	Afegir etiqueta Sense etiquetes, Sigues el primer a etiquetar aquest registre!