Investigation of the Tetrakis(dimethylamino)hafnium and H<sub>2</sub>S ALD Process: Effects of Deposition Temperature and Annealing
HfS<sub>2</sub> has recently emerged as a promising 2D semiconductor, but the lack of a reliable method to produce continuous films on a large scale has hindered its spreading. The atomic layer deposition of the material with the precursor tetrakis-dimethylamino-hafnium with H<sub>2</sub>S is a rela...
में बचाया:
| मुख्य लेखकों: | , , , |
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| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
MDPI AG
2022-05-01
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| श्रृंखला: | Solids |
| विषय: | |
| ऑनलाइन पहुंच: | https://www.mdpi.com/2673-6497/3/2/18 |
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