Investigation of the Tetrakis(dimethylamino)hafnium and H₂S ALD Process: Effects of Deposition Temperature and Annealing

HfS₂ has recently emerged as a promising 2D semiconductor, but the lack of a reliable method to produce continuous films on a large scale has hindered its spreading. The atomic layer deposition of the material with the precursor tetrakis-dimethylamino-hafnium with H₂S is a rela...

Ausführliche Beschreibung

Bibliografische Detailangaben

Hauptverfasser:	Zsófia Baji, Zsolt Fogarassy, Attila Sulyok, Péter Petrik
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	MDPI AG 2022-05-01
Schriftenreihe:	Solids
Schlagworte:	ALD HfS<sub>2</sub> TMD
Online-Zugang:	https://www.mdpi.com/2673-6497/3/2/18
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