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Direct Determination of 3D Distribution of Elemental Composition in Single Semiconductor Nanoislands by Scanning Auger Microscopy
An application of scanning Auger microscopy with ion etching technique and effective compensation of thermal drift of the surface analyzed area is proposed for direct local study of composition distribution in the bulk of single nanoislands. For Ge(x)Si(1 − x)-nanoislands obtained by MBE of Ge on Si...
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| Publicat a: | Nanoscale Res Lett |
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| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer US
2016
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4766170/ https://ncbi.nlm.nih.gov/pubmed/26909783 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1308-x |
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