Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A signific...

詳細記述

保存先:
書誌詳細
出版年:Sci Rep
主要な著者: Jiang, Shengxiang, Feng, Yulong, Chen, Zhizhong, Zhang, Lisheng, Jiang, Xianzhe, Jiao, Qianqian, Li, Junze, Chen, Yifan, Li, Dongsan, Liu, Lijian, Yu, Tongjun, Shen, Bo, Zhang, Guoyi
フォーマット: Artigo
言語:Inglês
出版事項: Nature Publishing Group 2016
主題:
Article
オンライン･アクセス:https://ncbi.nlm.nih.gov/pmc/articles/PMC4763243/
https://ncbi.nlm.nih.gov/pubmed/26902178
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep21573
タグ: タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!

類似資料