Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A signific...

पूर्ण विवरण

में बचाया:
ग्रंथसूची विवरण
में प्रकाशित:Sci Rep
मुख्य लेखकों: Jiang, Shengxiang, Feng, Yulong, Chen, Zhizhong, Zhang, Lisheng, Jiang, Xianzhe, Jiao, Qianqian, Li, Junze, Chen, Yifan, Li, Dongsan, Liu, Lijian, Yu, Tongjun, Shen, Bo, Zhang, Guoyi
स्वरूप: Artigo
भाषा:Inglês
प्रकाशित: Nature Publishing Group 2016
विषय:
Article
ऑनलाइन पहुंच:https://ncbi.nlm.nih.gov/pmc/articles/PMC4763243/
https://ncbi.nlm.nih.gov/pubmed/26902178
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep21573
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