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Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A signific...

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Bibliografske podrobnosti
izdano v:	Sci Rep
Main Authors:	Jiang, Shengxiang, Feng, Yulong, Chen, Zhizhong, Zhang, Lisheng, Jiang, Xianzhe, Jiao, Qianqian, Li, Junze, Chen, Yifan, Li, Dongsan, Liu, Lijian, Yu, Tongjun, Shen, Bo, Zhang, Guoyi
Format:	Artigo
Jezik:	Inglês
Izdano:	Nature Publishing Group 2016
Teme:	Article
Online dostop:	https://ncbi.nlm.nih.gov/pmc/articles/PMC4763243/ https://ncbi.nlm.nih.gov/pubmed/26902178 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep21573
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Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

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