Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering

Antzeko izenburuak

• High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering
  nork: Perello, David J., et al.
  Argitaratua: (2015)
• Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
  nork: Penumatcha, Ashish V., et al.
  Argitaratua: (2016)
• Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance
  nork: Chang, Hsun-Ming, et al.
  Argitaratua: (2017)
• Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier
  nork: Ling, Zhi-Peng, et al.
  Argitaratua: (2015)
• How Important Is the Metal–Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?
  nork: Yang, Lingming, et al.
  Argitaratua: (2017)