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Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance
In this work, we demonstrate for the first time an ultra-low contact resistance few-layered black phosphorus (BP) transistor with metallic PGe(x) contacts formed by rapid thermal annealing (RTA). The on-state current of the transistor can be significantly improved and the I(ON)/I(OFF) ratio increase...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5714961/ https://ncbi.nlm.nih.gov/pubmed/29203831 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-16845-w |
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