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InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters
The design of InGaN/dilute-As GaNAs interface quantum well (QW) leads to significant redshift in the transition wavelength with improvement in electron-hole wave function overlap and spontaneous emission rate as compared to that of the conventional In(0.2)Ga(0.8)N QW. By using self-consistent six-ba...
Αποθηκεύτηκε σε:
| Τόπος έκδοσης: | Sci Rep |
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| Κύριοι συγγραφείς: | , , , |
| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
Nature Publishing Group
2016
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| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4725840/ https://ncbi.nlm.nih.gov/pubmed/26758552 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep19271 |
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