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Photoluminescence and electronic transitions in cubic silicon nitride
A spectroscopic study of cubic silicon nitride (γ-Si(3)N(4)) at cryogenic temperatures of 8 K in the near IR - VUV range of spectra with synchrotron radiation excitation provided the first experimental evidence of direct electronic transitions in this material. The observed photoluminescence (PL) ba...
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| Izdano u: | Sci Rep |
|---|---|
| Glavni autori: | , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Nature Publishing Group
2016
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4698759/ https://ncbi.nlm.nih.gov/pubmed/26725937 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep18523 |
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