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Positive-bias gate-controlled metal–insulator transition in ultrathin VO(2) channels with TiO(2) gate dielectrics
The next generation of electronics is likely to incorporate various functional materials, including those exhibiting ferroelectricity, ferromagnetism and metal–insulator transitions. Metal–insulator transitions can be controlled by electron doping, and so incorporating such a material in transistor...
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| Publicado no: | Nat Commun |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4682056/ https://ncbi.nlm.nih.gov/pubmed/26657761 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms10104 |
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